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Title:
高周波バイアスの制御を伴うプラズマ処理方法および装置
Document Type and Number:
Japanese Patent JP4601179
Kind Code:
B2
Abstract:
A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.

Inventors:
Arthur M Hobart
John P. Holland
Christopher Olson
Application Number:
JP2000608403A
Publication Date:
December 22, 2010
Filing Date:
February 10, 2000
Export Citation:
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Assignee:
LAM RESEARCH CORPORATION
International Classes:
H01L21/3065; H05H1/00; C23F4/00; H01J7/24; H01J37/32; H01L21/302; H01L21/31; H03H7/40; H05B31/26; H05H1/46
Domestic Patent References:
JP10241895A
JP10154600A
Foreign References:
WO1999014855A1
WO1998047168A1
Attorney, Agent or Firm:
Seitaka Yoshida