Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5376664
Kind Code:
A
Abstract:
PURPOSE:To lower anodic reaction current at the completion of anodic reaction of desired parts by inhibiting the progression of lateral pore-opening by encircling with other conductivity type.
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Inventors:
SHIYOUJI SATORU
SASAKI ICHIEMON
SASAKI ICHIEMON
Application Number:
JP15239476A
Publication Date:
July 07, 1978
Filing Date:
December 17, 1976
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/73; H01L21/316; H01L21/331; (IPC1-7): H01L21/94