PRODUCTION OF THERMALLY DECOMPOSED BORON NITRIDE CRUCIBLE

Japanese Patent JPH02279599

A

PURPOSE:To decrease the content of boron nitride (BN) to be peeled at the time of cooling and to prolong the life of the thermally decomposed BN crucible having a multilayered wall structure when the crucible is used for growing the single crystal of a compd. semiconductor by intermittently dropping the pressure within a specific pressure range in a reaction chamber at the time of producing the abovementioned crucible. CONSTITUTION:Gaseous raw materials consisting of NH3 and boron halide (adequately BCl3, BF3 or the like) are supplied together with a carrier gas into the reaction chamber and the BN formed by thermally cracking the gases under 0.1 to 5Torr at 1750 to 2000 deg.C, more preferably 1850 to 1950 deg.C is deposited on the substrate, by which the BN crucible having the multilayered wall structure is produced. The pressure in the reaction chamber is intermittently dropped within the range of the decomposing pressure of the BN deposited on a base body or above and the pressure higher by 20% than this decomposing pressure or below. The BN crucible which is free from the peeling and breaking by residual metals or the like at the time of the cooling is thereby obtd.

JPS5973497	GROWTH OF COMPOUND SEMICONDUCTOR CRYSTAL
JPS61219797	TELLURIZED CADMIUM SINGLE CRYSTAL AND ITS PRODUCTION
JPH0570277	METHOD FOR GROWING CRYSTAL

IHARA KUNIHARU
YADA HIROHIDE
YASUNAGA SANETAKA

JP10014489A

November 15, 1990

April 21, 1989

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UBE INDUSTRIES

C30B27/02; C30B23/08; C30B35/00; H01L21/203; H01L21/208; (IPC1-7): C30B23/08; C30B27/02; C30B35/00; H01L21/203; H01L21/208

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