To attain control knot operation in a quantum computing element utilizing nuclear spin of a solid material.
A hole bar type element prepared by using the solid material containing an element whose nuclear spin moment is ≥3/2 comprises a 1st mesa part 23 extended to one direction and 2nd and 3rd mesa parts 25a, 25b extended from almost the center of the 1st mesa part 23. Each of the extending directions of the 2nd and 3rd mesa parts 25a, 25b is about 45° angle from the extending direction of the 1st mesa part 23. A source electrode S is formed on the left end part of the 1st mesa part 23 and a 2nd voltage terminal E2 is formed on the right end part of the 1st mesa part 23 when the 1st mesa part 23 is observed from a point P. A 1st voltage terminal E1 is formed on the end part of the 3rd mesa part 23b extended to the left side observed from the point P and a drain electrode D is formed on the end part of the 2nd mesa part 23a extended to the right side observed from the point P. A 1st Schottky gate electrode G1 is formed on the left side observed from the point P closer to the point P as compared with the source electrode S and a 2nd Schottky gate electrode G2 is formed on the right side observed from the point P closer to the point P as compared with the 2nd voltage terminal E2.
| JPH11297994 | SEMICONDUCTOR DEVICE |
| JP2003133327 | BIPOLAR TRANSISTOR |
| WO/2023/173425 | STRUCTURE OF AND PREPARATION METHOD FOR SILICON CARBIDE TRANSISTOR |
Yusuke Hiraki
Toshiaki Watanabe
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