Title:
REFRESHING METHOD IN DYNAMIC MEMORY
Document Type and Number:
Japanese Patent JP2002358780
Kind Code:
A
Abstract:
To provide a semiconductor memory comprising first and second banks of the memory cells which are so constituted that in a refreshing cycle, no operation is performed in one of the first and second banks while the content of predesignated number of cells in the other bank is being refreshed.
In this method, the semiconductor memory comprises the first and second banks of the memory cells so constituted that in the refreshing cycle, no operation is performed in one of the first and second banks while the content of predesignated number of cells in the other bank is being refreshed.
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Inventors:
CHOI JOO SUN
Application Number:
JP2002101218A
Publication Date:
December 13, 2002
Filing Date:
April 03, 2002
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC
International Classes:
G11C11/406; G11C11/401; (IPC1-7): G11C11/406
Attorney, Agent or Firm:
Shoichi Hase (1 person outside)