Title:
REMOVING METHOD FOR PHOTO RESIST FILM
Document Type and Number:
Japanese Patent JPS5492179
Kind Code:
A
Abstract:
PURPOSE:To prevent characteristics of a MOS-IC from deteriorating by removing a photo resist by a wafer scriber after dipping the photo resist in a resist exfoliation solution. CONSTITUTION:Photo resist 9 ion-implanted to high density is exfoliated entirely by being dipped in a resist-exfoliation solution, but since pattern circumference 13 and surface have been hardened extremely, it can not be removed from the substrate. Removing resist 9 sticking to the substrate only at pattern circumference 13 by a wafer scriber makes the remaining resist reside on the wafer only at the pattern circumference. Therefore, even after remaining photo resist 15 is removed by gas plasma of O2 and CF4, impurities 14 and 15 remain only field oxidized film 3 with no influence upon gate oxidized film 12, so that characteristics of the MOS-IC will not deteriorate.
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Inventors:
OGATA TOSHIAKI
Application Number:
JP15931177A
Publication Date:
July 21, 1979
Filing Date:
December 29, 1977
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
H01L21/30; G03C11/00; G03F7/42; H01L21/027; H01L21/302; H01L21/8238; H01L27/092; H01L29/76; H01L29/78; (IPC1-7): G03C11/00; H01L21/302; H01L29/76