Title:
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2010108989
Kind Code:
A
Abstract:
To obtain a high-quality package of WLP of high productivity.
A method of fabricating a package of a semiconductor wafer includes a dam formation step for forming a flow preventing dam 41 of an insulating layer, on an edge of the semiconductor wafer or on the periphery of an alignment mark 11; an insulating layer formation step for forming an insulating layer 23 on a passivation layer 22; a metal joint formation step for forming a metal joint 26 by using the alignment mark 11; and a wiring formation step for forming a wiring layer 24 by using the alignment mark 11.
More Like This:
Inventors:
MAKI KEIGO
Application Number:
JP2008276739A
Publication Date:
May 13, 2010
Filing Date:
October 28, 2008
Export Citation:
Assignee:
SHINKO ELECTRIC IND CO
International Classes:
H01L23/12; H01L21/56
Attorney, Agent or Firm:
Tadahiko Ito
Previous Patent: BONDED STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Next Patent: BALUN TRANSFORMER
Next Patent: BALUN TRANSFORMER