To provide a semiconductor device that is reduced in production cost and size, and a method of producing the same.
The method of producing the semiconductor device includes a step of forming an active region 25 including a narrow-width portion for enhancement type FET formation and a wide-width portion for depletion type FET formation by forming a trench 22 on a principal surface of a P-type Si substrate 21, a step of forming a P-type channel stopper region 25a at the wide-width portion by implanting a P-type impurity in the Si substrate 21 at an implantation angle of 30 to 45° to a normal of the principal surface such that the implantation direction relatively rotates around the normal and forming a P-type channel diffusion region 25b at the narrow-width portion, a step of burying the trench 22 with a trench element isolation insulating layer 26, a step of forming a gate insulating film 27, a step of forming an N-type channel diffusion region 28 at a second portion by implanting an N-type impurity on the Si substrate 21, and a step of forming a gate electrode 29.
Youichi Yamagata
Masahiko Shinohara