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Title:
SEMICONDUCTOR INTEGRATED OPTICAL DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR INTEGRATED OPTICAL DEVICE
Document Type and Number:
Japanese Patent JP2020174140
Kind Code:
A
Abstract:
To provide a semiconductor integrated optical device having a structure capable of reducing additional optical loss.SOLUTION: A semiconductor integrated optical device includes: a waveguide mesa 15 having a first multilayer including the first core layer 21a of a first element, a second multilayer including second core layer 23a of a second element and a butt-joint interface BJ between the first core layer and the second core layer; a support 13 having a first region 13a, a second region 13b, and a third region 13c; and a buried semiconductor region provided on the support. The first multilayer extends from the butt-joint interface to the first region, and the second multilayer extends from the butt-joint interface to the second region. On the third region, the second multilayer has a portion having a third mesa width smaller than a first mesa width of the first region and a second mesa width of the second region, and a side surface of the portion is buried in the buried semiconductor region. The second core layer has a waveguide core thickness on the second region. The second core layer has a core portion on a third region, and the core portion has a thickness different from the waveguide core thickness at a position away from the butt-joint interface.SELECTED DRAWING: Figure 1

Inventors:
HIRATANI TAKUO
Application Number:
JP2019075578A
Publication Date:
October 22, 2020
Filing Date:
April 11, 2019
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01S5/026
Domestic Patent References:
JP2007220930A2007-08-30
JP2003174224A2003-06-20
JPH09199794A1997-07-31
JP2001235645A2001-08-31
JPH08248248A1996-09-27
JP2013115161A2013-06-10
Foreign References:
US20130294472A12013-11-07
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
High Kunio Ki
Shotaro Terasawa
Ichira Kondo