SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURE

Title:

SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JP3773019

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To precisely control the layer thickness of an active layer with good reproducibility by providing a growth speed monitoring layer, whose composition is similar to that of the active layer between a first conductive clad layer and a substrate.
SOLUTION: An n-type AlGaAs lower clad layer 4, an undoped AlGaAs active layer 5, a p-type AlGaAs upper first clad layer 6, an etching stop layer, a p-type AlGaAs upper second clad layer 8 are sequentially stacked/formed on an n-type GaAs substrate 1 by a MOCVD method. An n-type AlGaAs growth speed monitoring layer 3, whose composition is similar to the undoped AlGaAs active layer, is formed between the n-type GaAs substrate 1 and the n-type AlGaAs lower clad layer 8. The thickness of the active layer 5 can be controlled with good reproducibility by feeding back the growth speed of the growth speed monitoring layer 3.

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Inventors:

Fumihiro Atsushi
Shinichi Kawato

Application Number:

JP14360898A

Publication Date:

May 10, 2006

Filing Date:

May 26, 1998

Export Citation:

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Assignee:

Sharp Corporation

International Classes:

H01S5/00; H01S5/30; (IPC1-7): H01S3/18

Domestic Patent References:

JP9148667A
JP9033223A
JP4247637A
JP59092998A
JP62189723A
JP7162099A

Attorney, Agent or Firm:

Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaya Koike

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