To provide a semiconductor pressure sensor that can measure pressure outside a cap by a pressure-sensing element arranged inside the cap without providing a through-hole in the cap.
A semiconductor pressure sensor 1 includes: a pressure-sensing element 10 that detects an ambient pressure; a substrate 20 on which the pressure-sensing element 10 is mounted; and a cap 30 that covers the pressure-sensing element 10 on the substrate 20. The sensor also includes between the substrate 20 and the cap 30: a bonding section 41 that bonds part of an end edge of the cap 30 to the substrate 41; and a nonbonding section 42 that brings another part of the end edge of the cap 30 and the substrate 20 into a non-bonded state. By providing the bonding section and nonbonding section, a gap can be provided between the cap and substrate while the cap is being fixed to the substrate. Since the pressure outside the cap is transmitted inside the cap via the gap at the nonbonding section, the pressure outside the cap can be thus measured by the pressure-sensing element inside the cap without providing a through-hole in the cap.
JPH0548097 | [Name of invention] Sensor abnormality monitoring device |
WO/2020/017198 | PRESSURE/TEMPERATURE SENSOR |
JPH1078365 | PRESSURE SENSOR |
MIZUKAMI KENZO
JP2010281569A | 2010-12-16 | |||
JP2008026080A | 2008-02-07 | |||
JP2013181788A | 2013-09-12 |
US20120126347A1 | 2012-05-24 | |||
WO2013065540A1 | 2013-05-10 |
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