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Title:
SEMICONDUCTOR SILICON-CONTAINING FILM FORMING MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2017120359
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor silicon-containing film forming material that shows excellent peelability when wet peeling is performed using a semiconductor acidic liquid, and a pattern forming method.SOLUTION: A semiconductor silicon-containing film forming material comprises a siloxane polymer component (a-1) at least comprising a functional group represented by the formula (i) and an ethylenic unsaturated double bond, and an organic solvent (in formula (i), R is at least one selected from a hydrogen atom and a C1-C30 monovalent organic group, n is an integer of 1-5, and * is a bond).SELECTED DRAWING: None

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Inventors:
ANNO YUSUKE
SEKO TOMOAKI
OTSUBO YUSUKE
NISHIGORI KATSUTOSHI
Application Number:
JP2016046614A
Publication Date:
July 06, 2017
Filing Date:
March 10, 2016
Export Citation:
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Assignee:
JSR CORP
International Classes:
G03F7/11; C09D183/07; G03F7/26; H01L21/027; H01L21/3065
Domestic Patent References:
JP2015018220A2015-01-29
JP2010085912A2010-04-15
Foreign References:
WO2014084279A12014-06-05
WO2015093415A12015-06-25
WO2014185435A12014-11-20
WO2009034998A12009-03-19
WO2013022099A12013-02-14
Attorney, Agent or Firm:
Kaoru Watanabe
Miwako Inoue



 
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