Title:
SEMICONDUCTOR YAW RATE SENSOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3385759
Kind Code:
B2
Abstract:
PURPOSE: To provide a small-sized high performance yaw rate sensor by employing a transistor type yaw rate sensor in which problems, i.e., deterioration of detection accuracy and erroneous detection of acceleration, are solved.
CONSTITUTION: Movable electrodes 51-54 are formed integrally above a semiconductor substrate 1 and a displaceable weight 4, serving as a gate electrode, is supported by beams 31-34 and anchor parts 21-24. Source electrodes 71, 72 and drain electrodes 81, 82 are formed oppositely to the weight 4 on the substrate 1 in order to constitute transistors along with the weight 4 serving as the gate electrode. A lower electrode 9 is formed at a part facing the weight 4 on the substrate 1 except the regions for forming the source and drain electrodes. Fixed electrodes 61-64 for excitation are then disposed on the substrate 11 through the movable electrodes 51-54 and the weight 4 is excited, along with the substrate 1, in the horizontal direction at a predetermined period. Displacement of the weight 4 caused by yaw is detected differentially based on the variation in respective source-drain current.
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Inventors:
Yukihiro Takeuchi
Kazuhiko Kano
Kenichi Nara
Kazuhiko Kano
Kenichi Nara
Application Number:
JP29678294A
Publication Date:
March 10, 2003
Filing Date:
November 30, 1994
Export Citation:
Assignee:
株式会社デンソー
International Classes:
G01C19/56; G01C19/5755; G01C19/5769; H01L29/84; (IPC1-7): G01C19/56; G01P9/04; H01L29/84
Domestic Patent References:
| JP6196721A | ||||
| JP6196722A | ||||
| JP6204502A | ||||
| JP61114123A |
Attorney, Agent or Firm:
Takehiko Suzue