To realize a method for manufacturing an inexpensive high quality single crystal insulating iron oxide film which has a flat and smooth surface and is free from the deterioration in the characteristics caused by N2 or the like, and with which high efficiency spin injection is possible even in a coherent tunnel mechanism of a spin filter-type tunnel magnetoresistance element.
The single crystal insulating iron oxide film is formed on the surface of a substrate 1 (heated to a temperature of ≤250°C) by vapor depositing metal iron containing an iron component in a content of 99.95% on the surface of the substrate 1 placed in a vacuum container 3 (3×10-6 Torr) and at the same time, supplying an ozone gas containing an ozone component being an oxidation source in a content of ≥90% onto the surface of the substrate 1 to oxidize the vapor-deposited iron.
KITA EIJI
| JP2003022528A | 2003-01-24 | |||
| JPH11339261A | 1999-12-10 |
JPN6010028673, 筑波大物工 他, "γ−Ｆｅ２Ｏ３エピタキシャル薄膜の磁性と電気伝導", 日本物理学会講演概要集, 200503, 第６０巻第１号第３分冊, ２４ｐＸＮ−９
JPN6010028674, Ｍ．Ｌｉｅ ｅｔ ａｌ．, "Ｇｒｏｗｔｈ ｏｆ Ｆｅ２Ｏ３ ｔｈｉｎ ｆｉｌｍｓ ｂｙ ａｔｏｍｉｃ ｌａｙｅｒ ｄｅｐｏｓｉｔｉｏｎ", Ｔｈｉｎ Ｓｏｌｉｄ Ｆｉｌｍｓ, 20050524, Ｖｏｌ．４８８, ｐｐ．７４−８１