To provide a process for producing a high precision thin film transistor simply and efficiently without requiring a vacuum system or photolithography.

The process for producing a thin film transistor element sheet where a plurality of thin film transistor elements are coupled on a support through a gate bus line and a source bus line comprises a step for forming a fluid electrode material repellent region on a channel region or the support directly or through a second layer, and a step for forming at least a source electrode and a drain electrode by feeding the fluid electrode material onto the channel region or the support directly or through the second layer.