MANUFACTURE OF SEMICONDUCTOR MATERIAL

Title:

MANUFACTURE OF SEMICONDUCTOR MATERIAL

Document Type and Number:

Japanese Patent JPS586120

Kind Code:

A

Abstract:

PURPOSE:To obtain a defect-free semiconductor material with good characteristics without performing high-frequency discharge by a method wherein a metal having a decomposition function of hydrogen or heavy hydrogen is coated and covered on the surface of the semiconductor material and heat treatment is applied under hydrogen gas atmosphere. CONSTITUTION:A glass substrate 25 is fixed to a holder 24 located in a vacuum container 21 and containing a heating heater and serving as a facing electrode to a high-frequency electrode 26. The air in the container 21 is exhausted to move the electrode 26 and a silicon thin film is formed on the substrate 25 by evaporating silicon through an electron beam evaporation source 23. Next, a metal provided with a function decomposing hydrogen such as palladium or heavy hydrogen is coated and covered on the silicon thin film by an electron beam evaporation method and then the metal is held at about 350 deg.C in about 20atm of high purity hydrogen gas for 10hr to perform the introduction of hydrogen.

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Inventors:

SHIMADA JIYUICHI
MURAYAMA YOSHIMASA
KATAYAMA YOSHIFUMI
SHIRAKI YASUHIRO
ISHIZAKA AKITOSHI
MARUYAMA EIICHI

Application Number:

JP10334581A

Publication Date:

January 13, 1983

Filing Date:

July 03, 1981

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L21/205; H01L21/20; H01L21/203; (IPC1-7): H01L21/203; H01L21/26; H01L21/324

Attorney, Agent or Firm:

Katsuo Ogawa (1 person outside)

Next Patent: JPH0586121