A phase shift mask blank, a method for manufacturing a phase shift mask using the blank, and a method for manufacturing a display device.

Japanese Patent JP6352224

B2

Provided is a phase shift mask blank having an excellent cross-sectional pattern shape and CD uniformity, used to form a phase shift mask for a display device having micropatterns formed. A phase shift film containing a chromium-based material is installed on a transparent substrate, and comprises a phase shift layer, a reflectivity reducing layer, and a metal layer installed between the phase shift layer and the reflectivity reducing layer. The metal layer has an extinction coefficient higher than the extinction coefficient of the reflectivity reducing layer in a wavelength region of 350-436 nm. The transmittance and phase difference of the phase shift film with respect to exposed light satisfy prescribed optical characteristics required as a phase shift film. The emulsion side reflectivity of the phase shift film is less than or equal to 10% in a wavelength region of 350-436 nm.

JP2021176002	MANUFACTURING METHOD OF PHOTOMASK
JP5700003	Method for manufacturing a photomask using a photomask blank to which a highly dry etching resistant polymer layer is added.
JPH10186632	BLANK FOR HALFTONE TYPE PHASE SHIFT MASK AND HALFTONE TYPE PHASE SHIFT MASK

Taniguchi
Seiji Tsuboi
Ushida Masao

JP2015142927A

July 04, 2018

July 17, 2015

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HOYA CORPORATION

G03F1/32; C23C14/06; G03F1/46; G03F1/58

JP2005092241A
JP2014026281A
JP9244212A
JP2005128278A
JP2012230379A
JP2012185505A

Yutaka Nagata
Takafumi Oshima
Tsukasa Ota

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