Title:
半導体装置
Document Type and Number:
Japanese Patent JP7247930
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor substrate, a contact region, a carrier suppression region and an electrode. The semiconductor substrate is shared by an insulated gate bipolar transistor (IGBT) region with an IGBT element and a freewheeling diode (FWD) region with an FWD element. The carrier suppression region is exposed from a surface of the semiconductor substrate in the IGBT region, and has a lower impurity concentration than the contact region. The carrier suppression region has a Schottky barrier junction with the electrode.
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Inventors:
Shuichi Toriyama
Sumitomo Masakiyo
Rahoman Tasbir
Sumitomo Masakiyo
Rahoman Tasbir
Application Number:
JP2020041275A
Publication Date:
March 29, 2023
Filing Date:
March 10, 2020
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L29/739; H01L21/336; H01L29/78; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| JP2017157673A | ||||
| JP2018073911A | ||||
| JP2016174029A | ||||
| JP2010171326A | ||||
| JP2011009387A |
Foreign References:
| WO2016114131A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Yuai Patent Office