BONDED STRUCTURE AND BONDING METHOD FOR BONDED STRUCTURE

Title:

BONDED STRUCTURE AND BONDING METHOD FOR BONDED STRUCTURE

Document Type and Number:

WIPO Patent Application WO/2010/125800

Kind Code:

A1

Abstract:

On the surface (102b) of a semiconductor element (102), a metal layer (105) having a crystal lattice different from that of a bonding material (106) having Bi as a main component is disposed, and a layer (104) composed of an element having a positive value of heat of formation of a compound with the bonding material (106) is disposed between the metal layer (105) having the crystal lattice different from that of the bonding material (106) and the surface (102b) of the semiconductor element (102). Thus, the components of the metal layer (105) having the crystal lattice different from that of the bonding material (106) are prevented from diffusing in the semiconductor element (102).

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Inventors:

FURUSAWA AKIO
SAKATANI SHIGEAKI
KITAURA HIDETOSHI
NAKAMURA TAICHI
MATSUO TAKAHIRO

Application Number:

PCT/JP2010/002999

Publication Date:

November 04, 2010

Filing Date:

April 27, 2010

Export Citation:

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Assignee:

PANASONIC CORP (JP)
FURUSAWA AKIO
SAKATANI SHIGEAKI
KITAURA HIDETOSHI
NAKAMURA TAICHI
MATSUO TAKAHIRO

International Classes:

H01L21/52; C22C12/00; H01L21/3205; H01L23/52

Foreign References:

JP2005026612A	2005-01-27
JP2001353590A	2001-12-25

Attorney, Agent or Firm:

HARADA, YOHEI (JP)
Yohei Harada (JP)

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