Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/090484
Kind Code:
A1
Abstract:
Provided is an etching method in which a silicon-containing layer of an object to be processed is etched in the pattern of a mask formed by etching both a second area containing a second polymer and an intermediate layer directly below the second area from a self-assembling block copolymer layer that comprises a first polymer and the second polymer layered via the intermediate layer on the silicon-containing layer. The etching method includes: a step in which an upper electrode and a lower electrode are arranged so as to face each other, a negative DC voltage is applied to the upper electrode and high frequency power is applied to the upper electrode or the lower electrode within a processing container of a plasma processing device in which the object to be processed is accommodated, processing gas including hydrogen gas and an inert gas is supplied into the processing container and plasma is generated, and a protective film is formed on the mask; and a step in which the silicon-containing layer is etched after the step in which the protective film is formed.
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Inventors:
TAKANASHI YUKI (JP)
Application Number:
PCT/JP2016/083812
Publication Date:
June 01, 2017
Filing Date:
November 15, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2013207089A | 2013-10-07 | |||
| JP2012204668A | 2012-10-22 | |||
| JP2009164626A | 2009-07-23 | |||
| JP2015084396A | 2015-04-30 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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