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Title:
ETCHING SOLUTION, REPLENISHMENT SOLUTION, AND METHOD FOR FORMING WIRING
Document Type and Number:
WIPO Patent Application WO/2014/171174
Kind Code:
A1
Abstract:
　The present invention pertains to a copper etching solution that can suppress side etching of a copper wiring pattern, to a replenishment solution thereof, and to a method for forming wiring. The copper etching solution comprises an acidic aqueous solution containing cupric ions, halide ions, and a non-ionic surfactant. The clouding point of the non-ionic surfactant is 15 to 55℃. According to this method for forming wiring, a layered wiring pattern (10) including a patterned metal oxide layer (9) and a copper wiring pattern (7) can be formed by bringing the etching solution in sequential contact with a copper layer (3) and a metal oxide layer (2).

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Inventors:
FUKUI YU (JP)
SAITO SATOSHI (JP)
ISHIDA TERUKAZU (JP)
Application Number:
PCT/JP2014/053844
Publication Date:
October 23, 2014
Filing Date:
February 19, 2014
Export Citation:
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Assignee:
MEC CO LTD (JP)
International Classes:
C23F1/18; H05K3/06
Foreign References:
JP2004256901A2004-09-16
JP2008041782A2008-02-21
JPH0633268A1994-02-08
JP2006111953A2006-04-27
JP2009235438A2009-10-15
JP2002525859A2002-08-13
JP2009231427A2009-10-08
Attorney, Agent or Firm:
SHINTAKU, Masato et al. (JP)
Masahito Shintaku (JP)
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