Title:
FILM FORMING METHOD AND FILM FORMING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/024859
Kind Code:
A1
Abstract:
This film forming method comprises: a supply step wherein a processing gas that contains a silicon-containing gas, a nitrogen-containing gas and a diluent gas is supplied into a process chamber in which a substrate is contained; and a film formation step wherein the processing gas is changed into a plasma by supplying power which is obtained by phase controlling and superposing power of a first frequency in the VHF band and power of a second frequency in the VHF band, said second frequency being different from the first frequency, into the process chamber, and a silicon nitride film is formed on the substrate by means of the processing gas that has been changed into a plasma.
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Inventors:
KANEKO MIYAKO (JP)
HASHIZUME TAKASHI (JP)
SUZUKI NAOKO (JP)
HASHIZUME TAKASHI (JP)
SUZUKI NAOKO (JP)
Application Number:
PCT/JP2021/027072
Publication Date:
February 03, 2022
Filing Date:
July 20, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H05H1/46; C23C16/42; C23C16/505; H01L21/31; H01L21/318
Foreign References:
| JP2003092200A | 2003-03-28 | |||
| JP2001274099A | 2001-10-05 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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