LAMINATED SOS SUBSTRATE - SHINETSU CHEMICAL CO

Title:

LAMINATED SOS SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2010/137589

Kind Code:

A1

Abstract:

Disclosed is an SOS substrate in which the diffusion of an aluminum component from a sapphire substrate into a silicon substrate, which can cause the deterioration in properties of a semiconductor device, is greatly reduced. Specifically disclosed is an SOS substrate which is produced by a process comprising at least the steps of: implanting an ion into a surface of a silicon substrate (1) to form an ion-implanted layer (3); prior to bonding a surface of a sapphire substrate (2) to the ion-implanted surface of the silicon substrate (1), subjecting at least one of the surfaces to a surface activation treatment; bonding the above-mentioned surface of the silicon substrate (1) to the above-mentioned surface of the sapphire substrate (2); heating the bonded substrates at a temperature up to 150 to 250˚C inclusive to produce a bonded material (5); and delaminating the bonded material in the direction along the ion-implanted layer to transfer a silicon thin film onto the sapphire substrate. In the SOS substrate, the Al concentration in the surface of the silicon thin film is 2 × 1011 atoms/cm2 or less as measured by an inductively coupled plasma mass spectrometry [ICP-MS] or an atomic absorption spectrometry.

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Inventors:

SUWA TAKESHI (JP)
AKIYAMA SHOJI (JP)
TOBISAKA YUJI (JP)
ITO ATSUO (JP)
KAWAI MAKOTO (JP)

Application Number:

PCT/JP2010/058826

Publication Date:

December 02, 2010

Filing Date:

May 25, 2010

Export Citation:

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Assignee:

SHINETSU CHEMICAL CO (JP)
SUWA TAKESHI (JP)
AKIYAMA SHOJI (JP)
TOBISAKA YUJI (JP)
ITO ATSUO (JP)
KAWAI MAKOTO (JP)

International Classes:

H01L21/02; H01L27/12

Domestic Patent References:

WO2007091639A1

2007-08-16

Foreign References:

JP2001298169A	2001-10-26
JP2006114523A	2006-04-27
JP2008300571A	2008-12-11
JP2009105315A	2009-05-14

Attorney, Agent or Firm:

OKUYAMA, Shoichi et al. (JP)
Okuyama In addition, it is 1. (JP)

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