Title:
LASER PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2012/014709
Kind Code:
A1
Abstract:
Disclosed is a laser processing method for forming a hole (24) in a flat target object (1) formed from silicon. Said method includes: a recess-formation step in which a recess (10), which opens to a laser-light incidence surface (3) of the target object (1), is formed in a part of said laser-light incidence surface that corresponds to the aforementioned hole (24); a modified-region formation step, after the recess-formation step, in which laser light (L) is focused onto the target object (1) to form a modified region (7) along a part of the target object (1) that corresponds to the hole (24); and an etching treatment step, after the modified-region formation step, in which the target object (1) is anisotropically etched, said etching being made to selectively progress along the modified region (7) to form a hole (24) in the target object (1). The disclosed laser processing method is characterized in that, in the modified-region formation step, the modified region (7) or cracks (C) extending from the modified region (7) are exposed to the inside surface of the recess.
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Inventors:
SHIMOI HIDEKI (JP)
KYUSHIMA HIROYUKI (JP)
ARAKI KEISUKE (JP)
KYUSHIMA HIROYUKI (JP)
ARAKI KEISUKE (JP)
Application Number:
PCT/JP2011/066319
Publication Date:
February 02, 2012
Filing Date:
July 19, 2011
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
SHIMOI HIDEKI (JP)
KYUSHIMA HIROYUKI (JP)
ARAKI KEISUKE (JP)
SHIMOI HIDEKI (JP)
KYUSHIMA HIROYUKI (JP)
ARAKI KEISUKE (JP)
International Classes:
B23K26/00; B23K26/38; B23K26/06; B23K26/40; H01L21/306
Foreign References:
| JP2010155259A | 2010-07-15 | |||
| JP2006167804A | 2006-06-29 | |||
| JP2005074663A | 2005-03-24 |
Other References:
See also references of EP 2599576A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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Claims: