Title:
LIGHT DETECTING DEVICE, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/037614
Kind Code:
A1
Abstract:
To provide a light detecting device capable of limiting the electric field of an interface between an insulating film and a semiconductor substrate. The light detecting device comprises: a semiconductor substrate; a first trench and a second trench that are provided in a lattice pattern on a first surface of the semiconductor substrate; an insulating film covering the inner surfaces of the first and second trenches and the first surface; an anode electrode embedded in the first trench; a P-type semiconductor region, a P+ semiconductor region, an N+ semiconductor region, and a cathode contact that are provided in an element region defined by the first and second trenches on the semiconductor substrate; and a cathode electrode in contact with the cathode contact. The insulating film is configured to include at least a first region and a second region, and the second region includes a part located at a depth from the first surface such that the distance between a third semiconductor region and a first electrode is minimized. Furthermore, the permittivity of the second region is set lower than that of the first region.
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Inventors:
MIYATA SATOE (JP)
Application Number:
PCT/JP2022/010929
Publication Date:
March 16, 2023
Filing Date:
March 11, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L31/107; H01L21/329; H01L27/146; H01L29/861; H01L29/866; H01L29/868
Domestic Patent References:
| WO2020203222A1 | 2020-10-08 | |||
| WO2013150839A1 | 2013-10-10 |
Foreign References:
| JP2019033136A | 2019-02-28 | |||
| JP2017037952A | 2017-02-16 | |||
| JP2008172108A | 2008-07-24 | |||
| JP2009231501A | 2009-10-08 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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