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Title:
MEMORY TESTING METHOD AND APPARATUS, AND MEMORY SYSTEM
Document Type and Number:
WIPO Patent Application WO/2023/197399
Kind Code:
A1
Abstract:
Disclosed are a memory testing method and apparatus, and a memory system. The method comprises: executing a write operation and a read operation on a memory unit in a noise environment, wherein the write operation comprises writing test data in the memory unit (501); and comparing a read result, which is obtained by means of executing the read operation, with the test data to obtain a signal margin test result of the memory unit affected by noise (502), wherein the noise in the noise environment at least comprises one of the following: power source voltage noise, write recovery time noise, and electric leakage noise of the memory unit.

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Inventors:
ZHOU KUN (CN)
Application Number:
PCT/CN2022/093270
Publication Date:
October 19, 2023
Filing Date:
May 17, 2022
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C29/50; G11C29/08
Foreign References:
JP2011060392A2011-03-24
CN114072749A2022-02-18
CN110322910A2019-10-11
CN110021333A2019-07-16
CN101916593A2010-12-15
CN112885401A2021-06-01
CN114283870A2022-04-05
US20010014922A12001-08-16
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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