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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2017/149604
Kind Code:
A1
Abstract:
The present invention has a step for forming a film on a substrate by performing a step for supplying the substrate with a first raw material, which contains a chemical bond between a predetermined element and nitrogen, or a chemical bond between a predetermined element and carbon, and a chemical bond between a predetermined element and hydrogen, and does not contain a chemical bond between nitrogen and hydrogen, and a step for supplying the substrate with a pseudo catalyst, which contains a group 13 element, and does not contain a chemical bond between nitrogen and hydrogen, said steps being performed overlapping each other for at least a fixed period of time. In the step for forming the film, the substrate is not supplied with a substance containing a chemical bond between nitrogen and hydrogen.

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Inventors:
NAKATANI KIMIHIKO (JP)
KAMAKURA TSUKASA (JP)
KARASAWA HAJIME (JP)
HARADA KAZUHIRO (JP)
Application Number:
PCT/JP2016/056067
Publication Date:
September 08, 2017
Filing Date:
February 29, 2016
Export Citation:
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Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/205; C23C16/455; H01L21/31; H01L21/318
Foreign References:
JP2006287194A2006-10-19
JP2008060455A2008-03-13
JP2006270016A2006-10-05
JP2014093331A2014-05-19
JP2015525773A2015-09-07
JP2015185614A2015-10-22
JP2015183260A2015-10-22
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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