METHOD FOR PRODUCING SEMICONDUCTOR WAFER

WIPO Patent Application WO/2011/089979

A1

Disclosed is a method for producing a semiconductor wafer, which involves: placing a wafer (10), which is provided with a substrate (11) and a semiconductor layer (20) formed on the substrate (11), on a carrier plate (fixed plate) (31) of a grinding machine via fixation wax (33a and 33b) in a manner such that the surface (10a) to be grinded of the wafer (10) faces upward; heating the carrier plate (31), on which the wafer (10) is placed, in order to soften the fixation wax (33a and 33b); pressure-bonding the wafer (10) from the side of the surface (10a) to be grinded by means of an air bag in a manner such that a portion of the soften fixation wax (33a and 33b) spreads and protrudes from the peripheral edge of the wafer (10); cooling the carrier plate (31) while applying pressure to the wafer (10) in order to harden the fixation wax (33a and 33b) and fix the wafer (10) onto the carrier plate (31); and rotating the surface (10a) to be grinded of the fixed wafer (10) while pressure-bonding the surface (10a) to the grinding plate of the grinder, thereby grinding the surface (10a) to be grinded. As a consequence, even if the wafer has warping, the wafer is grinded to have a predetermined thickness.

JPH08293478	EQUIPMENT AND METHOD FOR CLEANING UP SEMICONDUCTOR WAFER
JP2003249471	PROTECTION SHEET FOR SEMICONDUCTOR WAFER PROCESSING
WO/2020/066151	SAW WIRE

SUGANO SUSUMU (JP)

PCT/JP2011/050533

July 28, 2011

January 14, 2011

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SHOWA DENKO KK (JP)
SUGANO SUSUMU (JP)

H01L21/304; B24B7/22

JP2009070896A	2009-04-02
JPH11277413A	1999-10-12
JP2003347255A	2003-12-05
JPS63150130A	1988-06-22
JP2008177525A	2008-07-31

FURUBE, Jiro et al. (JP)
Jiro Furube (JP)

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