Title:
METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/020219
Kind Code:
A1
Abstract:
First, an n--type SiC epitaxial layer (2) is grown on the front surface of an n+-type SiC substrate (1). When doing so, a rear surface-side n--type SiC sublimation layer is also grown on the rear surface of the n+-type SiC substrate (1). Next, the rear surface-side n--type SiC sublimation layer and the surface layer of the rear surface of the n+-type SiC substrate (1) are removed by grinding. Subsequently, the modified layer formed on the surface layer of the post-grinded rear surface of the n+-type SiC substrate (1) is subjected to chemical mechanical polishing. Then, a nickel film is formed on the post-polished rear surface of the n+-type SiC substrate (1), and a nickel silicide layer is formed by subjecting the nickel film to silicidation by means of a heat treatment. Finally, a rear surface electrode is formed by depositing a titan film, a nickel film, and a silver film, in said order, on the surface of the nickel silicide layer. As a consequence, it is possible to inhibit the rear surface electrode from peeling off.
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Inventors:
NAKAJIMA TSUNEHIRO (JP)
IWAYA MASANOBU (JP)
IMAI FUMIKAZU (JP)
IWAYA MASANOBU (JP)
IMAI FUMIKAZU (JP)
Application Number:
PCT/JP2014/071121
Publication Date:
February 12, 2015
Filing Date:
August 08, 2014
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/28; H01L21/336; H01L29/12; H01L29/41; H01L29/78
Domestic Patent References:
| WO2012049792A1 | 2012-04-19 |
Foreign References:
| JP2007201155A | 2007-08-09 |
Attorney, Agent or Firm:
SAKAI, AKINORI (JP)
Akinori Sakai (JP)
Akinori Sakai (JP)
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