Title:
METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2014/175120
Kind Code:
A1
Abstract:
A method for producing a single crystal utilizing a single crystal pulling-up apparatus which is equipped with a chamber, a crucible that is arranged in the chamber and can house a dopant-added melt prepared by adding red phosphorous to a silicon melt, and a pulling-up unit for bringing a seed crystal into contact with the dopant-added melt and then pulling up the seed crystal. In the method, red phosphorous is added to the silicon melt in such a manner that the resistivity of the single crystal can become 0.7 to 0.9 mΩ·cm inclusive; a silicon wafer to be evaluated, which is produced from the single crystal, is subjected to a heat treatment in which the silicon wafer is heated in a hydrogen atmosphere having a temperature of 1200˚C for 30 seconds; and then the single crystal is pulled up while arbitrarily controlling a time during which the temperature of the single crystal becomes 570˚C ± 70˚C, so that the number of pits occurring in the silicon wafer to be evaluated can become 0.1 pit/cm2 or less.
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Inventors:
NARUSHIMA YASUHITO (JP)
KUBOTA TOSHIMICHI (JP)
OGAWA FUKUO (JP)
UTO MASAYUKI (JP)
KUBOTA TOSHIMICHI (JP)
OGAWA FUKUO (JP)
UTO MASAYUKI (JP)
Application Number:
PCT/JP2014/060721
Publication Date:
October 30, 2014
Filing Date:
April 15, 2014
Export Citation:
Assignee:
SUMCO TECHXIV CORP (JP)
International Classes:
C30B29/06; C30B15/04; C30B15/20
Domestic Patent References:
| WO2010021272A1 | 2010-02-25 | |||
| WO2008146724A1 | 2008-12-04 |
Foreign References:
| JP2010153631A | 2010-07-08 | |||
| JP2011009613A | 2011-01-13 | |||
| JP2006052133A | 2006-02-23 | |||
| JP2010030853A | 2010-02-12 |
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (JP)
Bottom intellectual property office of patent business corporation Tatsuyuki (JP)
Bottom intellectual property office of patent business corporation Tatsuyuki (JP)
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