Title:
METHOD FOR REMOVING SILICON DIOXIDE FROM WAFER AND MANUFACTURING PROCESS FOR INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2018/064984
Kind Code:
A1
Abstract:
A method for removing silicon dioxide from a wafer and a manufacturing method. The method can comprise: introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber (201); mixing the dehydrated hydrogen fluoride gas and the dehydrated alcohol gas to generate a gaseous etchant (202); allowing the etchant to react with the wafer within the process chamber, and keeping the process chamber interior in a high pressure condition to increase etching selection ratio (203); and extracting the reaction product from the process chamber (204). The method for removing silicon dioxide from a wafer removes silicon dioxide in a high selection ratio and a high efficiency by means of allowing the gaseous etchant to directly react with the silicon dioxide under high pressure, and extracting the reaction product after the reaction.
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Inventors:
MA ZHENGUO (CN)
Application Number:
PCT/CN2017/105369
Publication Date:
April 12, 2018
Filing Date:
October 09, 2017
Export Citation:
Assignee:
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD (CN)
International Classes:
H01L21/311
Foreign References:
| KR20050073679A | 2005-07-18 | |||
| US20090127648A1 | 2009-05-21 | |||
| CN103828029A | 2014-05-28 |
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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