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Title:
METHOD FOR SEPARATING A USEFUL LAYER AND COMPONENT OBTAINED BY SAID METHOD
Document Type and Number:
WIPO Patent Application WO2005012160
Kind Code:
A3
Abstract:
The invention concerns a method wherein a useful layer (1) is initially connected by a sacrificial layer (2) to a layer (3) constituting a substrate. Prior to etching of the sacrificial layer (2), at least part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched, so as to increase the roughness of its doped part. Prior to doping, a mask (9) is deposited on part of the useful layer (1) so as to delimit a doped region and a non-doped region of the surface (4, 5), one of the regions constituting a stop after the surface etching phase.

Inventors:
GRANGE HUBERT (FR)
DIEM BERNARD (FR)
VIOLLET BOSSON SYLVIE (FR)
BOREL MICHEL (FR)
Application Number:
PCT/FR2004/001699
Publication Date:
June 09, 2005
Filing Date:
July 01, 2004
Export Citation:
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Assignee:
COMMISSARIAT ENERGIE ATOMIQUE (FR)
GRANGE HUBERT (FR)
DIEM BERNARD (FR)
VIOLLET BOSSON YYLVIE (FR)
BOREL MICHEL (FR)
International Classes:
B81B3/00; B81C1/00; (IPC1-7): B81B3/00; B81C1/00
Foreign References:
US5750420A1998-05-12
US6004832A1999-12-21
US5824608A1998-10-20
EP0456029A11991-11-13
US5489556A1996-02-06
Other References:
ALLEY R L ET AL: "The effect of release-etch processing on surface microstructure stiction", SOLID-STATE SENSOR AND ACTUATOR WORKSHOP, 1992. 5TH TECHNICAL DIGEST., IEEE HILTON HEAD ISLAND, SC, USA 22-25 JUNE 1992, NEW YORK, NY, USA,IEEE, US, 22 June 1992 (1992-06-22), pages 202 - 207, XP010056353, ISBN: 0-7803-0456-X
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