MONOS DEVICE HAVING BURIED METAL SILICIDE BIT LINE

Title:

MONOS DEVICE HAVING BURIED METAL SILICIDE BIT LINE

Document Type and Number:

WIPO Patent Application WO2003054964

Kind Code:

A3

Abstract:

A MONOS device and method for making the device has a charge trapping dielectric layer (32), such as an oxide-nitride-oxide (ONO) layer (34, 36, 38), formed on a substrate (30). A recess (44) is created through the ONO layer (32) and in the substrate (30). A metal silicide bit line (48) is formed in the recess (44) and bit line oxide (54) is formed on top of the metal silicide. A word line (56) is formed over the ONO layer (32) and the bit line oxide (54), and a low resistance silicide (58) is provided on top of the word line (56). The silicide (58) is formed by laser thermal annealing, for example.

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Inventors:

OGURA JUSUKE
RAMSBEY MARK T
HALLIYAL ARVIND
KRIVOKAPIC ZORAN
NGO MINH VAN
TRIPSAS NICHOLAS H

Application Number:

PCT/US2002/039781

Publication Date:

March 04, 2004

Filing Date:

December 11, 2002

Export Citation:

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Assignee:

FASL LLC (US)

International Classes:

H01L21/8247; H01L21/336; H01L21/74; H01L21/8246; H01L29/788; H01L29/792; (IPC1-7): H01L27/115; H01L21/8246; H01L21/336

Foreign References:

US5168334A	1992-12-01
US6156654A	2000-12-05
EP0368097A2	1990-05-16

Other References: