Title:
N-TYPE SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2015/029649
Kind Code:
A1
Abstract:
Provided is an n-type SiC single crystal which has a low resistivity and a low threading dislocation density. An n-type SiC single crystal containing germanium and nitrogen, wherein the ratio of the density of germanium to the density of nitrogen (i.e., [Ge/N]) satisfies the relationship represented by the formula: 0.17 < [Ge/N] < 1.60.
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Inventors:
SHIRAI TAKAYUKI (JP)
Application Number:
PCT/JP2014/069444
Publication Date:
March 05, 2015
Filing Date:
July 23, 2014
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
International Classes:
C30B29/36; C30B19/04
Foreign References:
| JP2010189235A | 2010-09-02 | |||
| JP2008105896A | 2008-05-08 | |||
| JP2011102206A | 2011-05-26 | |||
| JP2007153719A | 2007-06-21 | |||
| JP2008105896A | 2008-05-08 | |||
| JP2010189235A | 2010-09-02 | |||
| JP2007153719A | 2007-06-21 | |||
| JP2011102206A | 2011-05-26 |
Other References:
A. I. IVANOV ET AL.: "High-temperature luminescence in 6H-SiC doped with Ga and N, Sov.", TECH. PHYS. LETT., vol. 15, no. 9, September 1989 (1989-09-01), pages 677 - 678, XP008180092
Y. A. VODAKOV ET AL.: "Electroluminescence of 6H-SiC doped with Ga and N", SOV. TECH. PHYS. LETT., vol. 16, no. 7, July 1990 (1990-07-01), pages 531 - 533, XP008180087
See also references of EP 3040452A4
Y. A. VODAKOV ET AL.: "Electroluminescence of 6H-SiC doped with Ga and N", SOV. TECH. PHYS. LETT., vol. 16, no. 7, July 1990 (1990-07-01), pages 531 - 533, XP008180087
See also references of EP 3040452A4
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
Aoki 篤 (JP)
Aoki 篤 (JP)
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