Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/057149
Kind Code:
A1
Abstract:
Provided is a nitride semiconductor light-emitting element provided with: an n-side layer; a p-side layer; and an active layer having a well layer provided between the n-side layer and the p-side layer, the well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, the barrier layer having an Al content higher than that of the well layer, wherein: an electron block structure layer is present between the active layer and the p-side layer; and the electron block structure layer has a first electron block layer having a band gap greater than that of the barrier layer, a second electron block layer that is provided between the p-side layer and the first electron block layer and that has a band gap greater than that of the barrier layer and smaller than that of the first electron block layer, and a neutral layer that is provided between the first electron block layer and the second electron block layer and that has a band gap smaller than that of the second electron block layer.
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Inventors:
ASADA KOJI (JP)
OKABE TOKUTARO (JP)
OKABE TOKUTARO (JP)
Application Number:
PCT/JP2016/077888
Publication Date:
April 06, 2017
Filing Date:
September 21, 2016
Export Citation:
Assignee:
NICHIA CORP (JP)
International Classes:
H01L33/32; H01L33/06
Foreign References:
| JP2000077795A | 2000-03-14 | |||
| JP2014241397A | 2014-12-25 | |||
| JP2014086729A | 2014-05-12 | |||
| JP2002223042A | 2002-08-09 | |||
| JP2000196194A | 2000-07-14 | |||
| JP2002314205A | 2002-10-25 | |||
| JPH11340580A | 1999-12-10 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
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