PHOTODIODE ARRAY - HAMAMATSU PHOTONICS KK

Title:

PHOTODIODE ARRAY

Document Type and Number:

WIPO Patent Application WO/2014/061610

Kind Code:

A1

Abstract:

[Problem] The objective is to provide a photodiode array having high temporal resolution. [Solution] A light-receiving region contains a plurality of light detection units (10), and each light detection unit (10) is provided with: a first semiconductor region (12) of a first conductivity type; a second semiconductor region (13, 14) of a second conductivity type configuring a p-n junction with the first semiconductor region (12); a first contact electrode (3A) that contacts the second semiconductor region; a second contact electrode (4A) that is provided with a material differing from that of the first contact electrode (3A), is disposed at a position overlapping the first contact electrode (3A), and contacts the first contact electrode; and a resistor layer (4B) that is contiguous with the second contact electrode (4A).

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Inventors:

YAMAMOTO KOEI (JP)
NAGANO TERUMASA (JP)
YAMAMURA KAZUHISA (JP)
SATO KENICHI (JP)
TSUCHIYA RYUTARO (JP)

Application Number:

PCT/JP2013/077839

Publication Date:

April 24, 2014

Filing Date:

October 11, 2013

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)

International Classes:

H01L31/107; H01L27/146; H01L31/00

Foreign References:

JP2012099580A	2012-05-24
JP2011003740A	2011-01-06
US1755171A	1930-04-22

Other References: