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Title:
POWER SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/205634
Kind Code:
A1
Abstract:
A power semiconductor device (1) comprises a power module unit (200), an adhesive sheet (6), a support member (7), and a flow preventing frame (8). The adhesive sheet (6) is adhered to the power module unit (200). The support member (7) is connected to the power module unit (200) with the adhesive sheet (6) therebetween. The flow preventing frame (8) is sandwiched between the power module unit (200) and the support member (7), and is disposed around the adhesive sheet (7). The adhesive sheet (7) has an outer peripheral surface (6c) adjoining an inner peripheral surface (18) of the flow preventing frame (8). A value obtained by dividing a maximum value of the inner pressure at the outer peripheral surface (6c) by a minimum value of the inner pressure is less than or equal to 10.

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Inventors:
YAMANE TOMOHISA (JP)
NISHIMURA TAKASHI (JP)
KOBAYASHI HIROSHI (JP)
MORISADA TATSUSHI (JP)
FUKU MASARU (JP)
Application Number:
PCT/JP2020/016078
Publication Date:
October 14, 2021
Filing Date:
April 10, 2020
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/36; H01L23/40; H01L25/07; H01L25/18
Foreign References:
JP2018026370A2018-02-15
JP2012174965A2012-09-10
JP2013110181A2013-06-06
JP2014013878A2014-01-23
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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