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Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/174584
Kind Code:
A1
Abstract:
According to the present invention, the following are obtained: a semiconductor device that ensures heat dissipation performance by using a heat dissipation member on which a plurality of fins are formed by bending a metal plate; a method for manufacturing said semiconductor device; and a power conversion device.　A semiconductor element (1) is joined to a lead frame (2). The lead frame (2) is provided on an insulation layer (3), and a metal base plate (4) is provided on a surface, of the insulation layer (3), that is on the opposite side from the surface that is on the side where the semiconductor element (1) is joined. The semiconductor element (1), the lead frame (2), the insulation layer (3), and the metal base plate (4) are sealed via a sealing member (5) such that a portion of the lead frame (2) and a portion of the surface of the metal base plate (4) are exposed. The portion of the metal base plate (4) exposed from the sealing member (5) is inserted into an opening (61) of a support frame body (6). A heat dissipation member (7) is joined to the metal base plate (4) and the support frame body (6).

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Inventors:
ROKUBUICHI HODAKA (JP)
YAMAMOTO KEI (JP)
SATO KUNIYUKI (JP)
Application Number:
PCT/JP2019/007322
Publication Date:
September 03, 2020
Filing Date:
February 26, 2019
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/29
Domestic Patent References:
WO2014020704A12014-02-06
Foreign References:
JP2012049167A2012-03-08
JP2006222461A2006-08-24
JP2014203978A2014-10-27
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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