Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/030440
Kind Code:
A1
Abstract:
Provided is a semiconductor device comprising: a semiconductor substrate including a first-electroconductive-type drift region; a first-electroconductive-type emitter region that is provided above the drift region inside the semiconductor substrate and that has a higher doping concentration than the drift region; a second-electroconductive-type base region provided between the emitter region and the drift region inside the semiconductor substrate; a first-electroconductive-type first storage region that is provided between the base region and the drift region inside the semiconductor substrate and that has a higher doping concentration than the drift region; a plurality of trench parts that are provided so as to penetrate the emitter region, the base region, and the first storage region from an upper surface of the semiconductor substrate, the trench part having an electroconductive part provided therein; and a capacitance adding part that is provided below the first storage region and that adds a gate-collector capacitance.
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Inventors:
NAITO TATSUYA (JP)
Application Number:
PCT/JP2017/028847
Publication Date:
February 15, 2018
Filing Date:
August 08, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
| WO2016080288A1 | 2016-05-26 |
Foreign References:
| JP2007311627A | 2007-11-29 | |||
| JP2013138172A | 2013-07-11 | |||
| JP2015056482A | 2015-03-23 | |||
| JP2011159763A | 2011-08-18 | |||
| JP2012064849A | 2012-03-29 | |||
| JP2013254844A | 2013-12-19 | |||
| JP2013008778A | 2013-01-10 | |||
| JP2012134376A | 2012-07-12 | |||
| JPH0548112A | 1993-02-26 | |||
| US20140054682A1 | 2014-02-27 | |||
| JP2016012637A | 2016-01-21 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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