Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/171134
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor device that has a structure suited for miniaturization and that is capable of achieving high-voltage resistance. [Solution] A semiconductor device comprises: an SJ layer which extends in a first direction within a plane and which is formed by alternately arranging a plurality of first-conductivity-type semiconductor regions and a plurality of second-conductivity-type semiconductor regions in a second direction orthogonal to the first direction; a first-conductivity-type first drain layer electrically connected to the SJ layer on one end side in the first direction; a second-conductivity-type channel layer provided on the SJ layer on the other end side in the first direction; a first-conductivity-type first source layer provided on the channel layer; and a first gate electrode provided on the lateral side in the first direction of the channel layer and the first source layer with a first insulating layer therebetween.
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Inventors:
OOKUBO KENICHI (JP)
Application Number:
PCT/JP2023/001188
Publication Date:
September 14, 2023
Filing Date:
January 17, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/336; H01L29/78; H01L21/8234; H01L27/088; H01L29/786
Domestic Patent References:
| WO2019186224A1 | 2019-10-03 |
Foreign References:
| JP2016062979A | 2016-04-25 | |||
| JP2007096336A | 2007-04-12 | |||
| JP2012216776A | 2012-11-08 | |||
| JP2019096776A | 2019-06-20 |
Attorney, Agent or Firm:
ITO, Manabu et al. (JP)
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