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Title:
SEMICONDUCTOR LASER, SEMICONDUCTOR LASER ARRAY, AND SEMICONDUCTOR LASER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/065744
Kind Code:
A1
Abstract:
Provided is a semiconductor laser integrated with a photodiode portion for monitoring an optical output. The semiconductor laser 100 is provided with: a DFB portion in which a back-side first cladding layer 3, a first diffraction grating layer 9, a light-emitting layer 1 composed of a first MQW structure and emitting laser light, a front-side first cladding layer 6, and a first contact layer 12 are stacked; a DBR portion in which a back-side second cladding layer 4 having a resistivity higher than that of the back-side first cladding layer 3, a second diffraction grating layer 10 which reflects part of the laser light back to the DFB portion, a first core layer 2a which guides the rest of the laser light and is composed of a second MQW structure having an effective bandgap energy smaller than that of the first MQW structure, and a front-side second cladding layer 7 having a resistivity higher than that of the front-side first cladding layer 6 are stacked; and a PD portion in which a back-side third cladding layer 5, a second core layer 2b composed of a second MQW structure which absorbs the rest of the laser light guided by the first core layer 2a, a front-side third cladding layer 8, and a second contact layer 14 are stacked.

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Inventors:
HOKAMA YOHEI (JP)
SUZUKI YOSUKE (JP)
Application Number:
PCT/JP2018/035549
Publication Date:
April 02, 2020
Filing Date:
September 26, 2018
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/026; H01S5/12
Domestic Patent References:
WO2017135381A12017-08-10
Foreign References:
JP2017085007A2017-05-18
JP2005183955A2005-07-07
JPS61191091A1986-08-25
JPS627186A1987-01-14
JPH0433386A1992-02-04
JPS58162090A1983-09-26
JPS6136987A1986-02-21
US20080212973A12008-09-04
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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