SHIELD STRUCTURE FOR A GROUP III-NITRIDE DEVICE AND METHOD OF FABRICATION

Title:

SHIELD STRUCTURE FOR A GROUP III-NITRIDE DEVICE AND METHOD OF FABRICATION

Document Type and Number:

WIPO Patent Application WO/2019/139610

Kind Code:

A1

Abstract:

A device structure, including a shield feature in a trench embedded within the one or more layers of III-N material is described. The shield feature includes a material having a higher electrical conductivity than the III-N material. A III-N device, such as III-N transistor may be above the shield feature and the one or more layers of III-N materials. The shield feature may be biased during operation of the III-N device to reduce electrical leakage between the III-N device and an underlying substrate material.

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Inventors:

THEN HAN WUI (US)
FISCHER PAUL (US)
RADOSAVLJEVIC MARKO (US)
DASGUPTA SANSAPTAK (US)

Application Number:

PCT/US2018/013482

Publication Date:

July 18, 2019

Filing Date:

January 12, 2018

Export Citation:

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Assignee:

INTEL CORP (US)

International Classes:

H01L29/772; H01L21/02; H01L21/768; H01L29/51; H01L29/66

Foreign References:

US20170062541A1	2017-03-02
US20050275038A1	2005-12-15
US20150206931A1	2015-07-23
US20170012099A1	2017-01-12
US20150145083A1	2015-05-28

Attorney, Agent or Firm:

HOWARD, James (US)

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