Title:
SINGLE-JUNCTION PHOTOVOLTAIC CELL
Document Type and Number:
WIPO Patent Application WO/2011/106204
Kind Code:
A3
Abstract:
A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single-junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer.
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Inventors:
BEDELL STEPHEN W (US)
FOGEL KEITH E (US)
SOSA CORTES NORMA E (US)
SADANA DEVENDRA (US)
SHAHRJERDI DAVOOD (US)
WACASER BRENT A (US)
FOGEL KEITH E (US)
SOSA CORTES NORMA E (US)
SADANA DEVENDRA (US)
SHAHRJERDI DAVOOD (US)
WACASER BRENT A (US)
Application Number:
PCT/US2011/024949
Publication Date:
December 29, 2011
Filing Date:
February 16, 2011
Export Citation:
Assignee:
IBM (US)
BEDELL STEPHEN W (US)
FOGEL KEITH E (US)
SOSA CORTES NORMA E (US)
SADANA DEVENDRA (US)
SHAHRJERDI DAVOOD (US)
WACASER BRENT A (US)
BEDELL STEPHEN W (US)
FOGEL KEITH E (US)
SOSA CORTES NORMA E (US)
SADANA DEVENDRA (US)
SHAHRJERDI DAVOOD (US)
WACASER BRENT A (US)
International Classes:
H01L31/06; H01L31/042
Foreign References:
| KR20090025257A | 2009-03-10 | |||
| US20100015750A1 | 2010-01-21 | |||
| JP2009532918A | 2009-09-10 |
Attorney, Agent or Firm:
PETROKAITIS, Joseph (2070 Route 52 MD 48, Hopewell Junction NY, US)
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