THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR

WIPO Patent Application WO/2018/196289

A1

A thin-film transistor (100) and a preparation method therefor, the preparation method comprising: forming an active layer (110); forming a gate electrode insulating layer (120) on the active layer (110); forming a gate electrode (130) on the gate electrode insulating layer (120); forming an inter-layer insulating layer (140) on the gate electrode (130) so as to cover the gate electrode (130) and the active layer (110), such that an interface (180) between the inter-layer insulating layer (140) and the active layer (110) is in a donor defect state; forming a through hole (170) in the inter-layer insulating layer (140) so as to expose the active layer (110); and forming a source electrode (150) and a drain electrode (160) on the inter-layer insulating layer (140), such that the source electrode (150) and the drain electrode (160) are respectively electrically connected to the active layer (110) by means of the through hole (170). The present invention may easily turn a part of the active layer into a conductor, thereby reducing the resistance between the source electrode/drain electrode and the channel region.

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GU PENGFEI (CN)

PCT/CN2017/105993

November 01, 2018

October 13, 2017

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BOE TECHNOLOGY GROUP CO LTD (CN)

H01L21/336; H01L29/34; H01L29/786

CN106876280A	2017-06-20
US20160322390A1	2016-11-03
US20170025544A1	2017-01-26
CN103840010A	2014-06-04

BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)

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