TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURING THE SAME

Title:

TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURING THE SAME

Document Type and Number:

WIPO Patent Application WO/2018/165809

Kind Code:

A1

Abstract:

A device includes a semiconductor substrate (100); a buried layer (101); and a trench (128) with inner walls extending from the buried layer (101) to a surface of the semiconductor substrate (100), the trench (128) having sidewalls, a bottom wall, a barrier layer (134) including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material (130, 132) formed on the barrier layer (134).

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Inventors:

XIONG YUFEI (CN)
YANG HONG (US)
CHISHOLM MICHAEL F (US)
LIU YUNLONG (CN)

Application Number:

PCT/CN2017/076387

Publication Date:

September 20, 2018

Filing Date:

March 13, 2017

Export Citation:

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Assignee:

TEXAS INSTRUMENTS INC (US)
TEXAS INSTRUMENTS JAPAN LTD (JP)

International Classes:

H01L21/00; H01L29/45

Foreign References:

US9397180B1	2016-07-19
CN103050389A	2013-04-17
US20160149011A1	2016-05-26
CN101887852A	2010-11-17

Attorney, Agent or Firm:

JEEKAI & PARTNERS (CN)

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