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Title:
TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCTION OF THE FILM, AND SPUTTERING TARGET FOR USE IN THE PRODUCTION OF THE FILM
Document Type and Number:
WIPO Patent Application WO/2007/142330
Kind Code:
A1
Abstract:
Disclosed is a tin oxide-containing target which is suitable for the formation of a transparent conductive film by DC sputtering process, CD pulse sputtering process or AC sputtering process. More specifically, disclosed is a sputtering target for use in the formation of a transparent conductive film by a sputtering process. The sputtering target comprises: tin oxide as the main component; and at least one element selected from a dopant group A consisting of zinc, niobium, titanium, magnesium, aluminum and zirconium and at least one element selected from a dopant group B consisting of tungsten, tantalum and molybdenum as dopants.

Inventors:
ODAKA HIDEFUMI (JP)
MITSUI AKIRA (JP)
NAKAGAMA SUSUMU (JP)
Application Number:
PCT/JP2007/061638
Publication Date:
December 13, 2007
Filing Date:
June 08, 2007
Export Citation:
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Assignee:
ASAHI GLASS CO LTD (JP)
ODAKA HIDEFUMI (JP)
MITSUI AKIRA (JP)
NAKAGAMA SUSUMU (JP)
International Classes:
C23C14/34; C04B35/457; G02F1/1343; H01B5/14; H01B13/00
Domestic Patent References:
WO2005078152A12005-08-25
WO2007055231A12007-05-18
Foreign References:
JP2000281431A2000-10-10
JP2000273622A2000-10-03
JPH10330924A1998-12-15
JP2005154820A2005-06-16
JP2006159526A2006-06-22
Other References:
APPLIED PHYSICS LETTERS, vol. 78, no. 3, 2001, pages 350
See also references of EP 2039798A4
Attorney, Agent or Firm:
SENMYO, Kenji et al. (SIA Kanda Square17, Kanda-konyacho,Chiyoda-k, Tokyo 35, JP)
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