TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCTION OF THE FILM, AND SPUTTERING TARGET FOR USE IN THE PRODUCTION OF THE FILM

WIPO Patent Application WO/2007/142330

A1

Disclosed is a tin oxide-containing target which is suitable for the formation of a transparent conductive film by DC sputtering process, CD pulse sputtering process or AC sputtering process. More specifically, disclosed is a sputtering target for use in the formation of a transparent conductive film by a sputtering process. The sputtering target comprises: tin oxide as the main component; and at least one element selected from a dopant group A consisting of zinc, niobium, titanium, magnesium, aluminum and zirconium and at least one element selected from a dopant group B consisting of tungsten, tantalum and molybdenum as dopants.

JP2006299400	SPUTTER TARGET, MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD
JP2004153104	VACUUM PROCESSING METHOD
WO/2006/119367	TARGET ASSEMBLIES, TARGETS BACKING PLATES, AND METHODS OF TARGET COOLING

ODAKA, Hidefumi (Limited 12-1, Yurakucho1-chome, Chiyoda-k, Tokyo 05, 1008405, JP)
小高 秀文 (〒05 東京都千代田区有楽町一丁目１２番１号 旭硝子株式会社内 Tokyo, 1008405, JP)
MITSUI, Akira (Limited 12-1, Yurakucho1-chome, Chiyoda-k, Tokyo 05, 1008405, JP)

JP2007/061638

December 13, 2007

June 08, 2007

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ASAHI GLASS COMPANY, LIMITED (12-1, Yurakucho 1-chome Chiyoda-k, Tokyo 05, 1008405, JP)
旭硝子株式会社 (〒05 東京都千代田区有楽町一丁目１２番１号 Tokyo, 1008405, JP)
ODAKA, Hidefumi (Limited 12-1, Yurakucho1-chome, Chiyoda-k, Tokyo 05, 1008405, JP)
小高 秀文 (〒05 東京都千代田区有楽町一丁目１２番１号 旭硝子株式会社内 Tokyo, 1008405, JP)

C23C14/34; C04B35/457; G02F1/1343; H01B5/14; H01B13/00

SENMYO, Kenji et al. (4th Floor, SIA Kanda Square17, Kanda-konyacho,Chiyoda-k, Tokyo 35, 1010035, JP)

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