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WO/2023/190546A1 |
This bias circuit comprises: a first bias transistor having a base or gate to which a first bias is supplied, and an emitter or source for supplying the bias to a first amplifier through a first resistor element; a first diode having an ...
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WO/2023/185095A1 |
The present invention application discloses a Doherty power amplifier, comprising an orthogonal coupler which comprises a first coupling inductor and a second coupling inductor, the orthogonal coupler being used for dividing an input sig...
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WO/2023/188760A1 |
According to the present invention, a detection device comprises: a substrate 10; a first piezoelectric thin film resonator 11a that comprises a first lower electrode 12a that is provided on the substrate, a first piezoelectric layer 14a...
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WO/2023/192158A1 |
An example device (105) includes: switch circuitry (106A) configured to: connect, in a first state (202) based on a control signal (118), a first switch input to a first switch output and a second switch input to a second switch output; ...
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WO/2023/185554A1 |
The embodiments of the present application relate to the technical field of semiconductors. Provided are a surface acoustic wave filter, an apparatus, and an electronic device, which are used for improving the performance of the surface ...
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WO/2023/188245A1 |
A gate bias control circuit (100) comprises: a wave detection unit (10) for detecting an input signal that is of a communication amplification transistor FET, that is a modulation wave signal obtained by modulation of a carrier wave, and...
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WO/2023/187291A1 |
The invention relates to an integrated circuit comprising: an enhancement-mode power transistor (P2) and a circuit for matching the voltage supplied to the gate of the enhancement-mode power transistor, the matching circuit comprising at...
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WO/2023/186168A1 |
The present application belongs to the technical field of micro-electro-mechanical systems. Disclosed are a resonator, an electronic component and a resonant system. The resonator comprises a first sub-resonator and a plurality of second...
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WO/2023/189052A1 |
This semiconductor module includes an IGBT device and a MISFET device that constitutes a parallel circuit with the IGBT device. The semiconductor module generates a drain current of the MISFET device in a voltage range lower than the bui...
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WO/2023/189162A1 |
The present invention transmits a vibration signal such that it is possible to favorably perform computation processing on a reception side. A conversion unit converts the vibration signal to floating point format data. The vibration s...
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WO/2023/190700A1 |
This elastic wave device 10 comprises: a support member 20 that has a non-penetrating cavity 23 on one of the two main surfaces thereof; a piezoelectric layer 21 that is provided on the one main surface of the support member 20 so as to ...
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WO/2023/190721A1 |
This elastic wave device comprises a support substrate containing a cavity portion, a piezoelectric layer provided on the support substrate, a functional electrode that is provided on the piezoelectric layer and at least partially overla...
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WO/2023/192160A1 |
One example includes a power supply system. The system includes a power switch configured to activate via a control voltage responsive to a first state of an activation signal to conduct current from a power rail (202) to a switching ter...
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WO/2023/184845A1 |
A peak current load control circuit, comprising: a reference voltage adjustment circuit (10), which is used for generating a reference voltage control signal according to a constant-current mode signal and/or a constant-voltage mode sign...
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WO/2023/188818A1 |
The present invention provides a vibration element having a structure which can efficiently convert an electric field into a magnetic field or vice versa. The vibration element according to the present technology comprises a vibration ...
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WO/2023/188116A1 |
A signal generation circuit (1) includes: a first-stage error-feedback-type input signal quantization circuit (3-1) that uses a difference between an output signal of a first quantizer and a first input signal as an input signal to a fir...
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WO/2023/186413A1 |
An apparatus is disclosed for a reconfigurable filter. In example aspects, the apparatus includes a filter circuit that has a first filter port (302-1) and a second filter port (302-2). The filter circuit includes a filter network (304),...
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WO/2023/190697A1 |
This elastic wave device 10 comprises: a support member 20 that has a cavity 23 on one of the two main surfaces thereof; a piezoelectric layer 21 that is provided on the one main surface of the support member 20 so as to cover the cavity...
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WO/2023/190677A1 |
Provided are a stress-relaxed acoustic multilayer film and a high-frequency filter device using the same. The acoustic multilayer film has two or more pairs of a first layer having a first specific acoustic impedance and a second layer h...
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WO/2023/189334A1 |
An elastic wave sensor 100 comprises: a piezoelectric substrate 10; a pair of comb electrodes 24a and 24b which are provided on the piezoelectric substrate 10 and have a plurality of electrode fingers 22a and 22b, spaces between adjacent...
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WO/2023/189206A1 |
A pulse drive circuit 410 comprises: a buffer 411 configured to receive an input of a transmission pulse signal Sin; a capacitor 413 configured to be provided between an output end of the buffer 411 and a primary-side coil 421 of a trans...
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WO/2023/188972A1 |
This semiconductor device (1) comprises: upper-side control input terminals (T1p, T2p, T3p); lower-side control input terminals (T1n, T2n, T3n); a power source terminal (Tvb); a control logic unit (16); a reference power source circuit (...
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WO/2023/187030A1 |
The invention relates to a piezoelectric-on-insulator (POI) substrate (100) comprising a support substrate (102), in particular a silicon-based substrate, a piezoelectric layer (108), in particular a layer of lithium tantalate (LTO) or l...
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WO/2023/185371A1 |
The present application relates to a surface acoustic wave device, a packaging module, and a manufacturing method for a surface acoustic wave device. The surface acoustic wave device comprises a piezoelectric substrate, an IDT structure,...
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WO/2023/184570A1 |
An open-loop operational amplifier circuit with high linearity. The open-loop operational amplifier circuit comprises a main circuit and an auxiliary circuit. The main circuit comprises: a first differential transistor, comprising a firs...
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WO/2023/187863A1 |
Provided is a driving circuit which makes it possible to reduce the amount of surge that occurs during an off operation performed when an overcurrent is detected, while reducing switching loss at a normal operation. The present invention...
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WO/2023/191753A1 |
This invention relates to at least one channel (2) in a radio, an operation mode (3) enabling data to be transmitted through the channel (2) by means of radio signals, a squelch setting (4) that cuts off signals at a level below a manufa...
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WO/2023/190656A1 |
Provided is an elastic wave device that, when used in a filter device, is capable of achieving suitable filter waveforms even if the size of the elastic wave device is not increased. An elastic wave device according to the present inve...
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WO/2023/188514A1 |
[Problem] To provide a joint body that enables improvement of a Q value of an elastic wave element. [Solution] A joint body 7 is provided with a support substrate 1 and a piezoelectric material layer 2C joined to the support substrate 1....
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WO/2023/186293A1 |
A clock generator circuit, comprising a gate having a first input electronically connected to an output of a first delay path circuit of another clock generator circuit and a second input electronically connected to an output of a second...
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WO/2023/188023A1 |
This bias circuit (10a) comprises: a first resistor element (R0) that is connected between a power source node (NP) for supplying a power source voltage (AVDD) and a first node (N1); a first N-type transistor (MN0) that is diode-connecte...
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WO/2023/190594A1 |
The purpose of the present disclosure is to reduce variation in stress occurring in a common mode noise filter. This common mode noise filter (1) comprises an element body (2), a plurality of conductor layers (3), and a via conductor. An...
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WO/2023/186781A1 |
The present invention relates to a device (100, 10) for generating a signal (BF) for controlling an operating function, and to a corresponding method, a computer program and a computer-readable storage medium, wherein the device (100, 10...
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WO/2023/191169A1 |
The present invention relates to an inverter comprising: a first load transistor which has gate and drain electrodes connected to a power voltage (VDD) terminal; a second load transistor which has gate and drain electrodes connected to a...
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WO/2023/190114A1 |
In the present invention, a first filter and a second filter are connected to a first hybrid and a second hybrid with a connection relationship in which, when signals are inputted to either one of a common terminal or a first terminal, s...
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WO/2023/188626A1 |
In the present invention, first and second gate signals are supplied to first and second transistors which are mutually connected in series, on the basis of drive control signals. On the basis of the first and second gate signals, turn-o...
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WO/2023/184353A1 |
Provided in the present application is a data processing method, the method comprising: after input data is obtained (201), obtaining a feature vector corresponding to each target byte in a plurality of bytes of the input data (202), whe...
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WO/2023/190209A1 |
An audio amplifier circuit 200 receives power supply voltage VCC at a power supply terminal VCC. A voltage source 250 generates internal power supply voltage VREGA obtained by multiplying the power supply voltage VCC by a first gain, and...
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WO/2023/186925A1 |
Control system for controlling a transistor comprising a gate, comprising a control unit adapted to connect a voltage supply to the gate via a first electrical path to allow the voltage supply to supply a first voltage to the transistor ...
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WO/2023/187921A1 |
A Doherty amplifier according to the present disclosure comprises: an input terminal; an output terminal; a first main transistor that is provided to a first signal path which connects the input terminal and the output terminal; a second...
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WO/2023/190369A1 |
Provided is an elastic wave device capable of suppressing unnecessary waves. The elastic wave device 10 according to the present invention comprises: a support member that includes a support substrate; a piezoelectric layer 14 that is ...
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WO/2023/189674A1 |
Provided is a resonant-tunneling diode and a terahertz oscillator enabling further performance improvement. The resonant-tunneling diode comprises: a multiple quantum well structure composed of a group III nitride semiconductor; a first ...
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WO/2023/190610A1 |
The present invention suppresses cracking in a piezoelectric layer. This acoustic wave device is provided with: a support member having a support substrate; a piezoelectric layer provided in a first direction of the support member, the f...
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WO/2023/190655A1 |
Provided is an elastic wave device which, when used in a filter device, makes it possible to obtain a suitable filter waveform without an increase in size. An elastic wave device10 according to the present invention comprises: a first ...
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WO/2023/189835A1 |
The present invention provides a composite filter device capable of increasing the out-of-band attenuation of a band-pass filter. A composite filter device according to the present invention comprises: a piezoelectric substrate 2; a fi...
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WO/2023/189073A1 |
Provided is an elastic wave device capable of effectively reducing the electric resistance of an IDT electrode. The elastic wave device 1 comprises a piezoelectric substrate 2 and an IDT electrode 3 provided on the piezoelectric substr...
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WO/2023/191089A1 |
This elastic wave device comprises a plurality of elastic wave resonators. Each among the plurality of elastic wave resonators includes a support substrate, a piezoelectric layer provided on the support substrate, and a functional electr...
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WO/2023/189429A1 |
A temperature sensor (1) comprises a first resistor bridge circuit (11) having a first resistor (R1) and a second resistor (R2) connected in series between an application terminal of a power supply voltage (Vdd) and an application termin...
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WO/2023/189918A1 |
A semiconductor relay 1 is provided with at least a housing 11, a first input terminal 6, a second input terminal 7, a first output terminal 8, a second output terminal 9, a light-emitting element 2, a light receiving element 51, a first...
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WO/2023/186169A1 |
A resonator and a resonant system, which belong to the technical field of devices. The resonator comprises: a piezoelectric resonance portion, a single-crystal resonance portion and a coupling portion. The piezoelectric resonance portion...
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