Title:
ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償
Document Type and Number:
Japanese Patent JP2013513944
Kind Code:
A
Abstract:
A method includes forming a stress compensation layer over a first side of a semiconductor substrate and forming a Group III-nitride layer over a second side of the substrate. Stress created on the substrate by the Group III-nitride layer is at least partially reduced by stress created on the substrate by the stress compensation layer. Forming the stress compensation layer could include forming a stress compensation layer from amorphous or microcrystalline material. Also, the method could include crystallizing the amorphous or microcrystalline material during subsequent formation of one or more layers over the second side of the substrate. Crystallizing the amorphous or microcrystalline material could occur during subsequent formation of the Group III-nitride layer and/or during an annealing process. The amorphous or microcrystalline material could create no or a smaller amount of stress on the substrate, and the crystallized material could create a larger amount of stress on the substrate.
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Inventors:
Jamal Lambdani
Application Number:
JP2012543145A
Publication Date:
April 22, 2013
Filing Date:
November 30, 2010
Export Citation:
Assignee:
NATIONAL SEMICONDUCTOR CORPORATION
International Classes:
H01L21/205; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2005116785A | 2005-04-28 | |||
| JP2003113000A | 2003-04-18 | |||
| JP2003119100A | 2003-04-23 | |||
| JP2003017412A | 2003-01-17 | |||
| JPS6386450A | 1988-04-16 | |||
| JP2002064201A | 2002-02-28 | |||
| JP2003059948A | 2003-02-28 | |||
| JP2009158804A | 2009-07-16 | |||
| JP2007221001A | 2007-08-30 | |||
| JPS62196813A | 1987-08-31 | |||
| JP2005527988A | 2005-09-15 | |||
| JP2009231561A | 2009-10-08 |
Foreign References:
| US20040124452A1 | 2004-07-01 | |||
| US20030162368A1 | 2003-08-28 |
Attorney, Agent or Firm:
Kyozo Katayose