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Title:
【発明の名称】二端子光電変換素子
Document Type and Number:
Japanese Patent JP2696300
Kind Code:
B2
Abstract:
PURPOSE:To obtain a photoelectric transducer having fast response and enabling switch operation by two terminals with hysteresis to an optical input by composing the optoelectric transducer of a P-N junction light-receiving section region, a negative resistance section and a bias-voltage energizing section. CONSTITUTION:An optoelectric transducer consists of a negative resistance section 1 having BAMBIT structure, a bias-voltage energizing section 2 and a light-receiving section region 3 as a photo-diode. A BAMBIT is composed of a P-base region 6, a P<+> region 8, a P<+> contact region 9, an emitter region 10 and a gate region 11 in the negative resistance section 1. On the other hand, the bias-voltage energizing section 2 contains resistance regions 12, 13, 14. The emitter region 10 is connected to the resistance region 13 by an emitter electrode 17 and a bonding pad 19, and the P<+> contact region 9 is connected to the resistance region 14 by the base electrode 16 of the BAMBIT. The light-receiving section region 3 is bonded with the P<+> contact region 9 and the resistance region 14 by the base region 16 of the BAMBIT.

Inventors:
Katsuya Shimizu
Application Number:
JP18913193A
Publication Date:
January 14, 1998
Filing Date:
June 30, 1993
Export Citation:
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Assignee:
Optoelectronic Industry Laboratory Co., Ltd.
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
JP2253665A
JP2249238A
Attorney, Agent or Firm:
Noriko Murata



 
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