Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP3573670
Kind Code:
B2
Abstract:
A semiconductor device is manufactured by forming a thin layer over a semiconductor substrate, coating photoresist on the thin layer, forming a photoresist pattern over the semiconductor substrate, injecting ions into the photoresist pattern so as to harden the photoresist pattern, and etching the thin layer by using the hardened photoresist pattern as an etch mask. The hardened photoresist pattern has an increased etch selectivity with respect to an underlying layer, allowing the use of thinner photoresist layers and improved etching.
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Inventors:
Kure Aine
Han Jin Kei
Yellow phase
Hayashi Higashikawa
Juokoshi Kim
Han Jin Kei
Yellow phase
Hayashi Higashikawa
Juokoshi Kim
Application Number:
JP35292399A
Publication Date:
October 06, 2004
Filing Date:
December 13, 1999
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
G03F7/40; H01L21/027; H01L21/265; H01L21/266; H01L21/311; H01L21/3115; H01L21/3213; H01L21/8239; H01L21/8242; H01L27/108; (IPC1-7): H01L21/027; G03F7/40; H01L21/265; H01L21/266
Domestic Patent References:
| JP8153714A | ||||
| JP3019334A | ||||
| JP2309635A | ||||
| JP63133629A | ||||
| JP52044571A | ||||
| JP5041373A | ||||
| JP1191424A |
Attorney, Agent or Firm:
Masaki Hattori